Progress Report for Alngra 10119
نویسنده
چکیده
To form a memory cell, it is essential to epitaxially grow high quality pnp stack 3C SiC on Si. It requires a SiC seed, p type, n-type and p type 3C-SiC to be realized. The distributions of the elements in the film will be largely decided by the processes performed for the different purposes. To verify the distribution of the elements with depth, SIMS can be a sensitive and informative technique for the characterization of SiC on Si. A great deal of information about C, Si, Al, N, and impurities, and structural defects may be obtained from SIMS measurement.
منابع مشابه
Progress Report for Alngra 10124
The main theme is to produce novel electric and dielectric nanostructures and develop new applications in micro and nanoelectronics for these nanostructures. Scientific objectives of this project are: (1) to produce uni-axial nanostructures in polymeric thin films using high energy ion beam irradiation (2) to understand their electric and dielectric properties (3) to evaluate their application ...
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